TAV2-14LN+

E-PHEMT Transistor

50Ω 0.05 to 10 GHz

• Low Noise Figure, 0.6 dB typ. at 6 GHz, 2V

• High Gain, 16.4 dB typ. at 6 GHz, 4V

• High OIP3, +30.9 dBm typ. at 6 GHz, 4V

• High P1dB, 18.8 dBm typ. at 6 GHz, 4V

• External biasing and matching required

• Usable to 12 GHz

TAV2-14LN-D+

E-PHEMT Transistor Die

50Ω 0.05 to 10 GHz

• Low Noise Figure, 0.6 dB typ. at 6 GHz, 2V

• High Gain, 16.4 dB typ. at 6 GHz, 4V

• High OIP3, +30.9 dBm typ. at 6 GHz, 4V

• High P1dB, 18.8 dBm typ. at 6 GHz, 4V

• External biasing and matching required

• Usable to 12 GHz

SYBDC-26-52VHP+

Bi-Directional Coupler

50Ω 26 dB Coupling 30 to 540 MHz 50 Watt

• High power handling, 50 W

• Low mainline loss, 0.12 dB typ.

• High directivity, 24 dB typ.

• Excellent VSWR, 1.12:1 typ.

• High power, 50W max with output load VSWR 2.0 max.

• High power, 30W max. with output open or short

HK-PT54-D+

Power Tap Die

50Ω 26.5 dB DC to 50 GHz

• Ultra-Wide Bandwidth, DC to 50 GHz

• Excellent Coupling Flatness 26.5±1.4 dB typ.

• Excellent VSWR, 1.2:1 typ.

• Wide bandwidth, DC to 50 GHz